(China (Mainland))
Product Summary
The TLP521-1 is a Photocoupler. It consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.
Parametrics
Absolute maximum ratings: (1)Forward current:70mA; (2)Forward current derating:-0.93mA/℃ (Ta≥50℃); (3)Pulse forward current:1A (100μ pulse, 100pps); (4)Reverse voltage:5V; (5)Junction temperature:125℃; (6)Collector-emitter voltage:55V; (7)Emitter-collector voltage:7V ; (8)Collector current:50mA ; (9)Collector power dissipation (1 circuit):150mW; (10)Collector power dissipation derating (1 circuit Ta≥25℃):-1.5mW/℃ ; (11)Storage temperature range:-55℃ to 125℃; (12)Operating temperature range:-55℃ to 100℃; (13)Lead soldering temperature:260(10s); (14)Total package power dissipation:250mW; (15)Total package power dissipation derating (Ta≥25℃):-2.5mW/℃ ; (16)Isolation voltage:2500Vrms (AC, 1min., R.H.≤ 60%).
Features
Features: (1)Collector-emitter voltage: 55 V (min) ; (2)Current transfer ratio: 50% (min), Rank GB: 100% (min) ; (3)Isolation voltage: 2500 Vrms (min).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 TLP521-1 |
Other |
|
Data Sheet |
Negotiable |
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TLP521-1(Y,F,T) |
Toshiba |
Transistor Output Optocouplers PCOUPLER GaAs Ired x |
Data Sheet |
Negotiable |
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TLP521-1-4 |
Other |
|
Data Sheet |
Negotiable |
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TLP521-1GB |
Other |
|
Data Sheet |
Negotiable |
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